View BFR183W_500973.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BFR183W
NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA

2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR183W
Maximum Ratings Parameter
Marking RHs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150 mW C mA Unit V
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 56 C 1)
210
K/W
1
Aug-09-2001
BFR183W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR183W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma
Unit max. 0.7 dB GHz pF
typ. 8 0.46 0.24 1
fT Ccb Cce Ceb F
6 -
Gma |S21e|2 -
1.2 2
-
18 11.5
-
15 9
-
= |S21 / S12 | (k-(k2-1)1/2 )
3
Aug-09-2001
BFR183W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA -
fF ps mA V ns
V deg fF -
V fF V eV K
-
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.57 0.4 0.43 0.5 0 0.41 61 101 175
fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
nH nH nH nH nH nH fF
BFR183W
Total power dissipation Ptot = f (TS )
500
mW
400 350 300 250 200 150 100 50 0 0 120 C
P tot
20
40
60
80
100
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
BFR183W
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
1.3
pF
10
GHz
1.1 1.0 8 7
10V 5V
Ccb
0.9 0.8 0.7
fT
6 5
3V
0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16
V
4 3
2V
1V
2
0.7V
1 0 0
22
5
10
15
20
25
30
35 mA
45
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
20 dB
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
13
dB 10V
11 17 16
3V 10V
10 9
3V
15
G
14 13 12 11 10 9 8 7 6 5 0 5 10 15 20 25 30
G
8 7 6 5 4
2V
2V
1V
1V
3 2
0.7V
0.7V
1 0
35 mA
45
-1 0
5
10
15
20
25
30
35 mA
45
IC
IC
6
Aug-09-2001
BFR183W
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
19 dB
0.9GHz
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
30
8V
IC=15mA
16 15
dBm 0.9GHz
5V
IP 3
14
3V
G
13 12 11 10 9 8 7 6 5 4 0 2 4 6 8 10
V 1.8GHz 1.8GHz
20
2V
15
1V
10
13
5 0
5
10
15
20
25
30
mA
40
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
35
Power Gain |S21|2= f(f)
V CE = Parameter
30
IC=15mA
dB dB
IC =15mA
25
S21
20 15 10
10V 1V
20
G
15
10
5
5
10V 1V 0.7V
0.7V
0 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
0 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
f
7
Aug-09-2001

▲Up To Search▲

Price & Availability of BFR183W

	To Download BFR183W Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .